Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time
Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time
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EUV 光刻胶中的圆角：通过分子量、PAG 尺寸和显影时间进行调整
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
P. Naulleau
中科院分区：
文献类型：
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作者：
C. Anderson;Joe Daggett;P. Naulleau
在本文中，角圆偏市售的极紫外光致抗蚀剂的分子量，光酸发生器（PAG）的大小，和发展时间的变化进行监测。这些实验表明，PAG的大小影响角偏置，而分子量和显影时间不。大的PAG被示出为比小的PAG表现出更少的拐角偏置，并且在某些情况下，更低的拐角圆化。此外，较重的抗蚀剂聚合物显示出比较轻的抗蚀剂聚合物表现出更少的拐角圆化。
In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist is monitored as molecular weight, photoacid generator (PAG) size, and development time are varied. These experiments show that PAG size influences corner biasing while molecular weight and development time do not. Large PAGs are shown to exhibit less corner biasing, and in some cases, lower corner rounding, than small PAGs. In addition, heavier resist polymers are shown to exhibit less corner rounding than lighter ones.