Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures
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DOI:
10.1021/acs.nanolett.3c03704
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发表时间:
2024-01-04
期刊:
影响因子:
10.8
通讯作者:
Yi,Di
Yi,Di
中科院分区:
材料科学1区
文献类型:
--
作者:
Tang,Aihua;Li,Chao;Yi,Di

文献摘要

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磁的电气控制是非常理想的节能自旋电子应用。实现电场驱动的垂直磁化开关一直是一个长期的目标,然而,这仍然是一个主要的挑战。本文报道了通过应变介导的磁电耦合对垂直磁化铁磁序的电场控制。在室温下,栅极电压可以等温切换补偿铁磁体FeTb的主导磁亚晶格,在环境条件下表现出高可逆性和良好的耐久性。通过在具有巨磁阻(GMR)的FeTb/Pt/Co自旋阀中实施该策略,我们证明了在辅助磁场的作用下,栅极电压可以选择性地控制不同的高阻和低阻状态。我们的研究结果为利用铁磁体开发电场控制的低功耗存储和逻辑器件提供了一条有希望的途径。
Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.