Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer
Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer
复制标题
SiO2 介电层上的 Al 纳米颗粒增强 AlGaN 基多量子阱的局域表面等离子体激元深紫外发射
DOI：
10.1088/1361-6528/aab168
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发表时间：
2018-05-11
期刊：
影响因子：
3.5
通讯作者：
Chen, Changqing
中科院分区：
文献类型：
--
作者：
He, Ju;Wang, Shuai;Chen, Changqing
在本文中，我们报道了在室温下，通过引入SiO₂介质中间层上的铝纳米粒子（NPs）的局域表面等离子体激元与AlGaN基多量子阱（MQWs）中的激子和光子的耦合，使集成光致发光（PL）强度在深紫外波段增强了2.6倍。与未处理的AlGaN多量子阱相比，在SiO₂介质中间层上有铝纳米粒子修饰的多量子阱中，内量子效率从16%显著提高到37%，提高了2.3倍，光子提取效率也提高了13%。偏振相关的光致发光测量表明，横向电模式和横向磁模式都比未处理的AlGaN多量子阱中的原始强度更强，这表明Al/SiO₂复合结构有很强的局域表面等离子体激元耦合过程和很强的散射能力。这些结果通过温度相关的光致发光测量得到的非辐射复合激活能以及理论三维时域有限差分计算得到了证实。
In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.