Sidewall Metallization on CMOS MEMS by Platinum ALD Patterning
Sidewall Metallization on CMOS MEMS by Platinum ALD Patterning
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通过铂 ALD 图案化在 CMOS MEMS 上进行侧壁金属化
DOI：
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发表时间：
2020
影响因子：
2.7
通讯作者：
G. Fedder
中科院分区：
文献类型：
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作者：
Yi;V. P. Chung;S. Santhanam;T. Mukherjee;G. Fedder
为了提高CMOS MEMS器件的性能，开发了选择性地在侧壁上涂覆铂（Pt）的图案化原子层沉积（ALD）。据我们所知，所提出的制造工艺是第一个在高深宽比MEMS侧壁上图案化金属ALD的工艺。引入剥离抗蚀剂的回流步骤，以通过解决纵梁问题来提高成品率。侧壁金属化使电容传感器具有更高的灵敏度，并消除了电介质充电。一个铂涂层谐振振荡器和电容式加速度计的例子，显示成功的过程结果。对镀铂谐振器振荡器的测量表明，其稳定性比原始电介质侧壁高得多。这种金属侧壁涂层也有可能用于其他CMOS MEMS器件，如开关。[2020-0178]
Patterned atomic layer deposition (ALD) that selectively coats sidewalls with platinum (Pt) is developed to improve performance on CMOS MEMS devices. The proposed fabrication process is the first, to our knowledge, to pattern metal ALD on high-aspect-ratio MEMS sidewalls. A reflow step for the lift-off resist is introduced to increase yield by solving stringer issues. Sidewall metallization enables higher sensitivity on capacitive sensors and eliminates dielectric charging. A Pt-coated resonator oscillator and a capacitive accelerometer are demonstrated as examples, showing the successful process results. The measurement on a Pt-coated resonator oscillator indicates much higher stability than with the original dielectric sidewalls. This metal sidewall coating also has potential for other CMOS MEMS devices, such as switches. [2020-0178]