Materials issues and devices of α- and β-Ga2O3
Materials issues and devices of α- and β-Ga2O3
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DOI：
10.1063/1.5123213
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发表时间：
2019-10-28
影响因子：
3.2
通讯作者：
Oshima, Yuichi
中科院分区：
文献类型：
--
作者：
Ahmadi, Elaheh;Oshima, Yuichi
Ga2O3是一种超宽带隙半导体，其带隙能量为4.5-5.3 eV（取决于其晶体结构），远大于SiC和GaN等传统宽带隙半导体（分别为3.3 eV和3.4 eV）。因此，Ga2O3在未来的功率器件应用中具有广阔的前景，并且与目前处于商用开发阶段的SiC或GaN功率器件相比，有望获得进一步的高性能。 Ga2O3 结晶成各种结构。其中，最稳定的β-Ga2O3和最大带隙能量为5.3 eV的α-Ga2O3已经报道了有希望的结果。在本文中，我们概述了用于未来功率器件应用的 β-Ga2O3 和 α-Ga2O3 的最先进技术。我们将在比较两种最有前途的多晶型物的背景下，对这两个阶段的优点和缺点给出一个观点，涉及材料特性、体晶体生长、外延生长、器件制造和最终的器件性能。由 AIP Publishing 许可发布。
Ga2O3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5-5.3 eV (depending on its crystal structure), which is much greater than those of conventional wide bandgap semiconductors such as SiC and GaN (3.3 eV and 3.4 eV, respectively). Therefore, Ga2O3 is promising for future power device applications, and further high-performance is expected compared to those of SiC or GaN power devices, which are currently in the development stage for commercial use. Ga2O3 crystallizes into various structures. Among them, promising results have already been reported for the most stable beta-Ga2O3, and for alpha-Ga2O3, which has the largest bandgap energy of 5.3 eV. In this article, we overview state-of-the-art technologies of beta-Ga2O3 and alpha-Ga2O3 for future power device applications. We will give a perspective on the advantages and disadvantages of these two phases in the context of comparing the two most promising polymorphs, concerning material properties, bulk crystal growth, epitaxial growth, device fabrication, and resulting device performance. Published under license by AIP Publishing.