Cryogenic Bandgap Reference Circuit With Compact Model Parameter Extraction of MOSFETs and BJTs for HPGe Detectors
Cryogenic Bandgap Reference Circuit With Compact Model Parameter Extraction of MOSFETs and BJTs for HPGe Detectors
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DOI：
10.1109/tns.2020.3021340
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发表时间：
2020-10
影响因子：
1.8
通讯作者：
Feng Liu;Z. Deng;Yinong Liu
中科院分区：
文献类型：
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作者：
Feng Liu;Z. Deng;Yinong Liu
本文介绍了一个低温带隙基准（BGR）电路的发展，在一个标准的0.18- $\mu \text{m}$ CMOS工艺的高纯锗（HPGe）探测器的低本底物理实验。它为斜坡发生器等混合信号电路提供与温度无关的基准电压源。可靠的低温模型对于电路设计至关重要。金属氧化物半导体场效应晶体管（MOSFET）和双极结型晶体管（BJT）的参数进行了表征，并在低温下从各种几何形状的直流测量中提取。MOSFET的阈值电压和载流子迁移率普遍增加，亚阈值斜率在77 K时相对于300 K有所下降。提取了低温下MOSFET和BJT的一组新的紧凑模型参数。在77 K时，对于不同尺寸的器件，在几乎所有的偏置区，模拟与测量的相对误差都小于10%。用修正的紧凑模型参数设计了两种不同的BGR电路，并在77 ~ 300 K温度范围内进行了评估。在300 ~ 77 K温度范围内，温度系数小于0.2mV/K。
This article presents the development of a cryogenic bandgap reference (BGR) circuit in a standard 0.18- $\mu \text{m}$ CMOS process for high-purity germanium (HPGe) detectors for low-background physics experiments. It provides a temperature-independent reference for mixed-signal circuits such as a ramp generator. A reliable cryogenic model is essential for the circuit design. The parameters of metal–oxide–semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) were characterized and extracted at cryogenic temperatures from dc measurements on various geometries. MOSFETs had a general increase in threshold voltage and carrier mobility, a decrease in subthreshold slope at 77 K, with respect to 300 K. A new set of compact model parameters for MOSFETs and BJTs under cryogenic temperatures have been extracted. The relative errors between simulation and measurement were below 10% in almost all the bias regions for various device dimensions at 77 K. Two different BGR circuits were designed with the modified compact model parameters and evaluated from 77 K to 300 K. Temperature coefficient of less than 0.2 mV/K has been achieved over the whole range from 300 K to 77 K.