Elastic deformation blockade in a single-electron transistor
Elastic deformation blockade in a single-electron transistor
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DOI：
10.1103/physrevb.68.121305
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发表时间：
2003-09
影响因子：
3.7
通讯作者：
N. Nishiguchi
中科院分区：
文献类型：
--
作者：
N. Nishiguchi
预测了自由悬挂单电子晶体管（SET）中电子输运的阻塞现象。施加于其操作的电压引起作用于SET的机电力，从而引起结构变形和超过临界电压的崩溃。的电特性变得敏感的SET上的电荷波动在发病的结构不稳定性。导致电特性的改变，其阻碍电子在零偏置电压区域周围通过SET的传输。
A blockade phenomenon for electron transport in a freely suspended single-electron transistor (SET) is predicted. Voltages applied for its operation induce electromechanical forces acting on the SET, giving rise to structural deformation and collapse over a critical voltage. The electric characteristics become sensitive to charge fluctuations on the SET at the onset of the structural instability. leading to changes in the electrical characteristics that hinder electron transport through the SET around the zero-bias-voltage region.