Variable nonvolatile memory arrays for adaptive computing systems
Variable nonvolatile memory arrays for adaptive computing systems
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DOI:
10.1109/iedm.2013.6724690
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发表时间:
2013-12
期刊:
影响因子:
--
通讯作者:
H. Noguchi;S. Takeda;K. Nomura;K. Abe;K. Ikegami;E. Kitagawa;N. Shimomura;J. Ito;S. Fujita
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文献类型:
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作者:
H. Noguchi;S. Takeda;K. Nomura;K. Abe;K. Ikegami;E. Kitagawa;N. Shimomura;J. Ito;S. Fujita
Magnetic RAM (MRAM) has a unique potential to change its memory capacity from small to large capacity. This paper presents a novel variable circuit based on 1T-1MTJ of perpendicular STT-MRAM memory arrays. It can cover all memory hierarchy and computing units that are variable and adjustable to applications by selecting single, dual or quadruple cell mode and changing circuit resources.