Variable nonvolatile memory arrays for adaptive computing systems

Variable nonvolatile memory arrays for adaptive computing systems
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DOI:
10.1109/iedm.2013.6724690
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发表时间:
2013-12
期刊:
2013 IEEE International Electron Devices Meeting
影响因子:
--
通讯作者:
H. Noguchi;S. Takeda;K. Nomura;K. Abe;K. Ikegami;E. Kitagawa;N. Shimomura;J. Ito;S. Fujita
H. Noguchi;S. Takeda;K. Nomura;K. Abe;K. Ikegami;E. Kitagawa;N. Shimomura;J. Ito;S. Fujita
中科院分区:
其他
文献类型:
--
作者:
H. Noguchi;S. Takeda;K. Nomura;K. Abe;K. Ikegami;E. Kitagawa;N. Shimomura;J. Ito;S. Fujita

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磁性随机存储器(MRAM)具有独特的潜力,可以将其存储容量从小容量改变为大容量。提出了一种基于1T-1MTJ垂直STT-MRAM存储器阵列的新型可变电路。它可以通过选择单、双或四单元模式和改变电路资源来覆盖所有可变和可根据应用调整的存储层次和计算单元。
Magnetic RAM (MRAM) has a unique potential to change its memory capacity from small to large capacity. This paper presents a novel variable circuit based on 1T-1MTJ of perpendicular STT-MRAM memory arrays. It can cover all memory hierarchy and computing units that are variable and adjustable to applications by selecting single, dual or quadruple cell mode and changing circuit resources.