Tunable rapid electron transport in titanium oxide thin films
Tunable rapid electron transport in titanium oxide thin films
复制标题
氧化钛薄膜中可调节的快速电子传输
DOI：
10.1063/5.0132959
复制
发表时间：
2022
影响因子：
4
通讯作者：
Y. Sheng
中科院分区：
文献类型：
--
作者：
Runze Li;Faguang Yan;Yongcheng Deng;Yaxuan Shang;Y. Sheng
电子的快速传输引发了许多新的物理现象，成为高速电子学的一个关键点。二维电子气(2DEG)由于其高的电子迁移率而引起了人们的极大关注，这一点已经在不同的材料中观察到，如半导体、氧化物界面和2D材料。在本文中，我们首次报道了在二氧化钛薄膜中形成的肖特基量子阱中二维EG的存在和电操作。在研究我们的多层薄膜的电输运特性时，我们考虑了界面不对称的电子散射效应。我们发现电子将从低迁移率半导体和金属导电沟道转移到平面外加电场作用下的高迁移率二维电导沟道。因此，在肖特基量子阱中形成的二维电子气的电子浓度和迁移率是可以调节的，并且纳米器件呈现出非线性的伏安曲线。在室温下，随着电场的增大，纳米器件的微分电阻率下降了两个数量级。在低温下，在我们的纳米器件中实验观察到了电子的弱电子局域化，进一步证明了肖特基量子阱中二维电子气的存在。我们的工作将为我们提供关于多层薄膜中快速电子输运的新的物理机制，并为现代微电子工业带来新的功能器件。
Rapid electron transport triggers many novel physical phenomena and becomes a critical point for high-speed electronics. Two-dimensional electron gas (2DEG) has drawn great attention due to its high electron mobility, and this has been observed in different materials, such as semiconductor, oxide interfaces, and 2D materials. In this paper, we report, for the first time, the existence and electrical manipulation of 2DEG in the Schottky quantum well, which was formed in the titanium oxide thin films. We take the asymmetry interface electron scattering effect into consideration when studying the electrical transport properties of our multilayer thin films. We found electrons would be transferred from the low-mobility semiconducting and metallic conductive channels to the high-mobility 2DEG conductive channel with an in-plane applied electric field. Therefore, electron concentration and mobility of the 2DEG formed in the Schottky quantum well could be tuned, and the nano-devices exhibited non-linear voltage–current curves. The differential resistivity of the nano-devices could decrease by two orders with increasing electric field at room temperature. Weak electron localization of electrons was experimentally observed in our nano-devices at low temperature, which further demonstrated the existence of 2DEG in the Schottky quantum well. Our work will provide us new physics about the rapid electron transport in the multilayer thin films and bring novel functional devices for the modern microelectronic industry.
影响因子：
64.8
作者：
Caviglia, A. D.;Gariglio, S.;Triscone, J. -M.
通讯作者：
Triscone, J. -M.
影响因子：
64.8
作者：
Ohtomo, A;Hwang, HY
通讯作者：
Hwang, HY