Resistive switching characteristics of indium-tin-oxide thin film devices
Resistive switching characteristics of indium-tin-oxide thin film devices
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氧化铟锡薄膜器件的阻变特性
DOI：
10.1002/pssa.201330646
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Khiat A
中科院分区：
文献类型：
--
作者：
Khiat A
我们证明了氧化铟锡（ITO），当用作金属-绝缘体-金属型器件中的活性核心材料时，有利于电阻开关。我们在硅和石英晶片上制造了器件，以展示透明器件。此外，我们还研究了有源区厚度对器件特性的影响，发现器件的开关阈值与ITO厚度成正比。对于包括厚ITO膜的器件观察到单极切换，而对于薄ITO膜和厚ITO膜两者在不存在高电压形成步骤的情况下发生双极切换。我们的研究表明，ITO具有良好的电阻存储器应用的潜力。
We demonstrate that indium tin oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices' characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.