Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells
Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells
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DOI：
10.1073/pnas.1508578112
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
Nanjia Zhou;Myung‐Gil Kim;S. Loser;Jeremy Smith;H. Yoshida;Xugang Guo;C. Song;Hosub Jin;
中科院分区：
文献类型：
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作者：
Nanjia Zhou;Myung‐Gil Kim;S. Loser;Jeremy Smith;H. Yoshida;Xugang Guo;C. Song;Hosub Jin;
意义 开发独立于系统和非材料特定的界面层（IFL）以促进有效的电荷收集对于有机光伏（OPV）电池的性能至关重要。在这里，我们报告了一种广泛适用的 IFL 设计策略，使用溶液处理的非晶氧化物半导体，可以通过改变元素组成而不改变表面化学来调整其能量。根据特定有机活性层的能量要求，这些氧化物可以很容易地设计成拨入的能级。我们以 OPV 太阳能电池为测试平台，使用一系列光敏本体异质结材料来证明这些电子可调氧化物在优化各种 OPV 材料组性能方面的有效性。在不同类别的有机光电器件中，控制有机半导体-无机电极界面上的电荷注入、提取和阻挡对于提高量子效率和输出电压至关重要。为此，在电接触和有机半导体之间插入工程界面层（IFL）的策略显着提高了有机发光二极管和有机薄膜晶体管的性能。对于有机光伏 (OPV) 器件，电子灵活的 IFL 设计策略可在不改变表面化学的情况下逐步调整无机电极系统和有机光敏组件之间的能级匹配，这将使 OPV 电池能够适应不断变化的光敏材料世代。在此，我们报告了化学/环境稳定、低温固溶处理的非晶透明半导体氧化物合金、In-Ga-O 和 Ga-Zn-Sn-O 的实施情况，作为倒置 OPV 的 IFL。 IFL 成分的连续变化可在较大范围内调节导带最小值，为多种有机活性层材料提供优化的 OPV 功率转换效率，并在 IFL/光活性层能量学和器件性能之间建立清晰的相关性。
Significance The development of system-independent and non–material-specific interfacial layers (IFLs) to facilitate efficient charge collection is of crucial importance for organic photovoltaic (OPV) cell performance. Here we report a broadly applicable IFL design strategy using solution-processed amorphous oxide semiconductors where their energetics can be tuned by varying the elemental composition without varying the surface chemistry. Based on the energetic requirements of specific organic active layers, these oxides can be readily designed with dialed-in energy levels. Using OPV solar cells as a test bed, we use a broad series of photoactive bulk heterojunction materials to demonstrate the effectiveness of these electronically tunable oxides for optimizing the performance of diverse OPV material sets. In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.