Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
复制标题
绝缘体上硅金属氧化物半导体场效应晶体管极薄硅层中声子限制反型层电子迁移率
DOI：
10.1063/1.366480
复制
发表时间：
1997
影响因子：
3.2
通讯作者：
S. Horiguchi
中科院分区：
文献类型：
--
作者：
Masanari Shoji;S. Horiguchi
采用弛豫时间近似和一维自洽计算方法，研究了300 K下绝缘体上硅场效应晶体管极薄（100）Si层中声子限制的反型层电子迁移率。对于大于约5 nm的Si层厚度tSi，发现作为有效垂直电场的函数的迁移率行为与体Si反型层的迁移率行为几乎相同。然而，对于小于该厚度的厚度，由于限制效应，迁移率行为受到电子结构变化的显著影响。随着Si层厚度的减小，声子限制的电子迁移率μph增加到最大值，在tSi为0.3nm时，并单调减小。迁移率的增加是由于具有比其他子带更高迁移率的最低能量子带中的电子分数的增加。在极薄的tSi区的迁移率下降归因于声子的增强。
Phonon-limited inversion layer electron mobility in extremely thin (100) Si layers of silicon-on-insulator field-effect transistors has been studied at 300 K using a relaxation time approximation and a one-dimensional self-consistent calculation. For the Si layer thickness tSi of more than approximately 5 nm, the mobility behavior as a function of an effective vertical electric field is found to be almost identical with that of bulk Si inversion layers. For a thickness of less than that, however, the mobility behavior is considerably affected by the change in the electronic structures due to a confinement effect. As the Si layer thickness decreases, the phonon-limited electron mobility μph increases to a maximum at tSi of ∼3 nm and decreases monotonically. The increase in mobility results from the increase of the fraction of electrons in the lowest energy subband that has a higher mobility than other subbands. The mobility decrease in the extremely thin tSi region is attributed to the enhancement of phono...
影响因子：
3.2
作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
通讯作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons