Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance
Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance
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DOI：
10.1063/1.4761959
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发表时间：
2012-10-22
影响因子：
4
通讯作者：
Ogura, Atsushi
中科院分区：
文献类型：
--
作者：
Hashiguchi, Hiroki;Takei, Munehisa;Ogura, Atsushi
我们使用表面增强拉曼散射（SERS）评估了在表面氧化硅衬底上弛豫的硅锗上的薄应变硅膜中的应力。通过SERS技术，应变硅峰得到了增强。然而，应变硅峰向更高波数移动，而来自硅衬底的峰没有变化。我们在纵光学（LO）和声子光学（TO）声子激活条件下的光学几何结构中进行了拉曼测量。从这些测量中可以明确，峰的移动归因于出现的TO声子峰，这是由近场光中z偏振分量的激发所导致的。（C）2012美国物理学会。[http://dx.doi.org/10.1063/1.4761959]
We evaluated the stress in a thin strained-Si film on relaxed SiGe on a surface-oxidized Si substrate using surface enhanced Raman scattering (SERS). The strained-Si peak was enhanced by the SERS technique. However, the strained-Si peak shifted toward a higher wavenumber while the peaks from the Si substrate were unchanged. We performed Raman measurement under the optical geometry in LO and TO phonon active conditions. From these measurements, it was clarified that the peak shift was attributed to the TO phonon peak that appeared, which was caused by the excitation of the z polar component in the near-field light. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4761959]