Design of Class E power amplifier with nonlinear parasitic output capacitance
Design of Class E power amplifier with nonlinear parasitic output capacitance
复制标题
具有非线性寄生输出电容的E类功率放大器设计
DOI：
10.1109/82.752911
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Long
中科院分区：
文献类型：
--
作者：
P. Alinikula;K. Choi;S. Long
E类放大器利用输出并联电容器在操作周期期间进行电荷存储。该放大器即使使用非线性输出电容也能工作，但所需的元件值与使用线性电容产生的值不同。本文首次求解了具有超突变结压容特性的非线性输出电容的E类放大器的方程和元件值。超突变结电容存在于实际MOS器件的漏-体结处。分析结果以图表形式呈现，为MOS E类功率放大器设计提供了初始元件值。该程序验证了一个单级900 MHz的MOS功率放大器从2 V电源电压工作的设计实例。
The Class E amplifier exploits the output shunt capacitor for charge-storing during the operation cycle. The amplifier works even with a nonlinear output capacitor, but the required component values are different from the values resulting with the linear capacitor. In this paper the equations and component values are solved for the first time for a Class E amplifier having a nonlinear output capacitor with hyperabrupt junction voltage-capacitance characteristics. A hyperabrupt junction capacitor is present especially at the drain-to-bulk junction of practical MOS devices. The results of the analysis are presented in plots providing initial component values for MOS Class E power amplifier design. The procedure is validated with a design example of a single-stage 900 MHz MOS power amplifier operating from a 2-V supply voltage.