Two-photon absorption and photoionization cross-section measurements in the 5p56p configuration of xenon.
Two-photon absorption and photoionization cross-section measurements in the 5p56p configuration of xenon.
复制标题
氙 5p56p 配置中的双光子吸收和光电离横截面测量。
DOI：
10.1103/physreva.41.1340
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
W. Bischel
中科院分区：
文献类型：
--
作者：
Stefan Kröll;W. Bischel
并测定了2p5和2p6态在5p‘6p构型和193和248 nm处的光电离截面中的2p9(J=2)态，并与以前的实验值和理论值进行了比较。本文描述和讨论了荧光耗竭光谱作为一种测定激发态光电离截面的方法，并显示出许多吸引人的特点。基于我们的截面测量，我们计算了在249.6 nm，激光强度为30 mW/cm，25 ns的时间内，以2p(J=0)态为中间态的(2+1)光子在Xe中的光致电离可以产生10%的分数电离。
and 2p9(J =2) states in the 5p'6p con6guration and photoionization cross sections at 193 and 248 nm from the 2p5 and 2p6 states have been determined and are compared with previous experimental and theoretical values where such exist. Fluorescence depletion spectroscopy as a method for deter- mining excited-state photoionization cross sections is described and discussed and shown to have many attractive features. Based on our cross-section measurements, we calculate that (2+ 1)-photon photoionization in Xe with a laser intensity of 30 MW/cm during 25 ns at 249.6 nm, using the 2p, (J =0) state as an intermediate state, can produce a fractional ionization of 10%.