Characterization of a Gafchromic film for the two-dimensional profile measurement of low-energy heavy-ion beams
Characterization of a Gafchromic film for the two-dimensional profile measurement of low-energy heavy-ion beams
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DOI：
10.1016/j.nima.2016.04.055
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发表时间：
2016-08
影响因子：
1.4
通讯作者：
Y. Yuri;K. Narumi;T. Yuyama
中科院分区：
文献类型：
--
作者：
Y. Yuri;K. Narumi;T. Yuyama
实验研究了用辐射变色膜测量低能重离子束横向强度分布的可行性。我们采用Gafchromic辐射变色薄膜HD-V2，其活性层没有表面保护层。通过用通用扫描仪阅读薄膜，以光密度（OD）表征用几种离子束照射的薄膜的着色响应。为了广泛地探索膜响应的能量依赖性，束的动能从1.5 keV/u变化到27 MeV/u。我们已经发现，HD-V2膜的着色是由10 keV/u量级的低能离子束辐照引起的。光束的范围比薄膜活性层的厚度短得多。还讨论了OD响应与离子种类的关系。我们证明，Gafchromic膜这里使用的是有用的测量这种低能离子束的强度分布。
The feasibility of the transverse intensity distribution measurement of low-energy (keV/u range) heavy-ion beams using radiochromic films is experimentally explored. We employ a Gafchromic radiochromic film, HD-V2, whose active layer is not laminated by a surface-protection layer. The coloration response of films irradiated with several ion beams is characterized in terms of optical density (OD) by reading the films with a general-purpose scanner. To explore the energy dependence of the film response widely, the kinetic energy of the beams is varied from 1.5 keV/u to 27 MeV/u. We have found that the coloration of HD-V2 films is induced by irradiation with low-energy ion beams of the order of 10 keV/u. The range of the beams is considerably shorter than the thickness of the film's active layer. The dependence of OD response on ion species is also discussed. We demonstrate that the Gafchromic film used here is useful for measuring the intensity distribution of such low-energy ion beams.