Phase‐coupled two‐dimensional AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser array
Phase‐coupled two‐dimensional AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser array
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DOI：
10.1063/1.102981
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发表时间：
1990-05
影响因子：
4
通讯作者：
D. Deppe;J. P. Ziel;N. Chand;G. Zydzik;S. Chu
中科院分区：
文献类型：
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作者：
D. Deppe;J. P. Ziel;N. Chand;G. Zydzik;S. Chu
数据展示了AlxGa1 - xAs - GaAs垂直腔面发射激光器3×3二维阵列的光学耦合操作。该阵列的室温阈值电流为90ma，器件的几何形状允许从器件的外延侧发射光。
Data are presented demonstrating the optically coupled operation of a 3×3 two‐dimensional array of AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting lasers. Room‐temperature threshold current for the array is 90 mA, with the device geometry allowing for light emission from the epitaxial side of the device.