Fabrication and analysis of Mg3Bi2 thin films by post annealing Mg/Bi bilayer thin films
Fabrication and analysis of Mg3Bi2 thin films by post annealing Mg/Bi bilayer thin films
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后退火 Mg/Bi 双层薄膜的 Mg3Bi2 薄膜的制备和分析
DOI：
10.1016/j.matlet.2022.133460
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发表时间：
2023
影响因子：
3
通讯作者：
Jun-ichi Tani and Hiromichi Ishikawa
中科院分区：
文献类型：
--
作者：
Ngoc Quang Trinh;Shinichi Tashiro;Tetsuo Suga;Tomonori Kakizaki;Kei Yamazaki;Ackadech Lersvanichkool;Hanh Van Bui;Manabu Tanaka;Jun-ichi Tani and Hiromichi Ishikawa
镁基热电材料因其重量轻、成本低、原材料丰富等优点而备受关注。通过对磁控溅射Mg/Bi双层薄膜的退火处理，成功制备了六方Mg3 Bi 2多晶薄膜。在下面的Bi层的表面上观察到不规则的簇;因此，Mg-Bi薄膜表面呈现具有不规则突起的不均匀结构。在523 + 673 K的温度下进行了两步退火处理，得到了化学成分均匀的Mg3 Bi 2薄膜，在565 K下的热电功率因数为0.89 μW/cmK 2。
Mg-based thermoelectric materials have attracted significant attention because of the lightweight, low cost, and abundance of the raw materials. We successfully fabricated randomly oriented hexagonal Mg3Bi2polycrystalline thin films by the post-annealing treatment of Mg/Bi bilayer thin films deposited by magnetron sputtering. Irregular clusters were observed on the surface of the underlying Bi layer; thus, the Mg-Bi thin film surface exhibited an uneven structure with irregular protrusions. Further, two-step post annealing (523 + 673 K) was performed to obtain a homogeneous chemical composition; the thermoelectric power factor of the Mg3Bi2film was found to be 0.89 μW/cmK2at 565 K.