Geometric and electronic structure of epitaxial iron silicides
Geometric and electronic structure of epitaxial iron silicides
复制标题
外延硅化铁的几何和电子结构
DOI：
10.1116/1.578329
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
R. Miranda
中科院分区：
文献类型：
--
作者：
J. Álvarez;A. D. Parga;J. J. Hinarejos;J. Figuera;E. G. Michel;C. Ocal;R. Miranda
通过扫描隧道显微镜 (STM)、X 射线光电子能谱、离子散射能谱 (ISS) 和紫外光电子能谱等表面敏感技术，对 Si(111)7×7 上外延生长的几种硅化铁相的几何结构和电子结构进行了表征。硅化物是通过固相和反应沉积外延生长的，其稳定性范围是原位确定的，作为铁覆盖率和退火温度的函数。特别是，我们研究了低覆盖度低温区域中出现的相。此外，最重要的 FeSi2 相（γ-FeSi2 和 β-FeSi2）的微晶已使用 STM 在原子水平上进行了表征，同时使用 ISS 分析了表面终止。
The geometric and electronic structure of several iron silicide phases epitaxially grown on Si(111)7×7 have been characterized by means of surface sensitive techniques including scanning tunneling microscopy (STM), x‐ray photoelectron spectroscopy, ion scattering spectroscopy (ISS), and ultraviolet photoelectron spectroscopy. The silicides were grown by solid‐phase and reactive‐deposition epitaxy, and their stability range was determined in situ as a function of iron coverage and annealing temperature. In particular, we have studied the phases appearing in the low‐coverage low‐temperature region. Additionally, the crystallites of the most important FeSi2 phases (γ‐FeSi2 and β‐FeSi2) have been characterized at atomic level with STM, while the surface termination was analyzed with ISS.