Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment
Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment
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DOI：
10.1063/1.3583446
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发表时间：
2011-04-25
影响因子：
4
通讯作者：
Kobayashi, Keisuke
中科院分区：
文献类型：
--
作者：
Bierwagen, Oliver;Speck, James S.;Kobayashi, Keisuke
使用X射线光电子能谱（XPS）和电流-电压（I-V）测量的汞接触，我们表明，表面的电子积累层的In 2 O3可以通过氧等离子体处理去除。对于未处理的样品，XPS测量到朝向表面向下弯曲的能带和导带峰，并且I-V曲线是线性的，这表明存在表面累积层。处理后，样品向上弯曲，导带峰消失，I-V曲线呈非线性，表明没有表面积累层。表面累积层的薄层电阻> 45 k Ω由处理后总薄层电阻的增加推导出。表面电子积累层的去除开辟了使用肖特基接触半导体In 2 O3的电特性和器件应用的可能性。(C)2011年美国物理学会。[doi：10.1063/1.3583446]
Using x-ray photoemission spectroscopy (XPS) and current-voltage (I-V) measurements of Hg contacts we show that the surface electron accumulation layer of In2O3 can be removed by an oxygen plasma treatment. For the untreated sample, XPS measured a downward band bending toward the surface and a conduction band peak, and the I-V curve was linear which indicated the presence of a surface accumulation layer. After the treatment an upward bending, the absence of the conduction band peak, and a nonlinear I-V curve indicated the absence of the surface accumulation layer. The sheet resistance of the surface accumulation layer of > 45 k Omega was deduced from the increase of the total sheet resistance upon the treatment. The removal of the surface electron accumulation layer opens up the possibility to use Schottky contacts for electrical characterization and device applications of semiconducting In2O3. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583446]