A nonvolatile memory element based on an organic field-effect transistor
A nonvolatile memory element based on an organic field-effect transistor
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DOI：
10.1063/1.1788887
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发表时间：
2004-09
影响因子：
4
通讯作者：
K. Unni;R. D. Bettignies;S. Dabos-Seignon;J. Nunzi
中科院分区：
文献类型：
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作者：
K. Unni;R. D. Bettignies;S. Dabos-Seignon;J. Nunzi
以并五苯为有源材料，聚偏氟乙烯-三氟乙烯铁电共聚物为栅绝缘体，制备了有机场效应晶体管。制备的器件显示正常的p型晶体管操作。可以通过相对于短路的源极和漏极向栅极施加适当的电压来将导通和关断状态写入器件。该器件表现出优异的记忆保持性能。
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.