Layer tungsten and its applications for VLSI interconnects
Layer tungsten and its applications for VLSI interconnects
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钨层及其在 VLSI 互连中的应用
DOI：
10.1109/iedm.1988.32855
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
A. Manocha
中科院分区：
文献类型：
--
作者：
N. Tsai;V. Rana;R. Huttemann;Y. Wong;R.W. Haynes;R. Singh;A. Manocha
报道了一种制备小晶粒钨薄膜的新方法及其在多层金属互连中的应用。通过使用薄硅层中断钨晶粒生长并通过在随后的钨沉积期间消耗硅层，可以获得具有细晶粒的钨膜。细晶粒的钨显示出膜粗糙度的显著改善，并为插塞形成提供了优势。晶粒尺寸和界面硅厚度对薄膜电阻率的影响进行了表征。良好的器件特性已获得使用这种层状钨金属布线或窗口插头的应用。<<ETX>>
The authors report a novel method of fabricating chemical-vapor-deposited (CVD) small-grain tungsten films and its application to multilevel metal interconnects. By interrupting the tungsten grain growth using a layer of thin silicon and by consuming the silicon layer during subsequent tungsten deposition, tungsten films with fine grains can be obtained. The fine-grained tungsten shows a significant improvement in film roughness and offer an advantage for plug formation. Grain size and interface silicon thickness effects on film resistivity are characterized. Good device characteristics have been obtained using this layered tungsten for metal wiring or window plug applications.<<ETX>>