Avalanche multiplication in InAlAs
Avalanche multiplication in InAlAs
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DOI：
10.1109/ted.2006.887229
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发表时间：
2007-01-01
影响因子：
3.1
通讯作者：
Jones, S. K.
中科院分区：
文献类型：
--
作者：
Goh, Y. L.;Massey, D. J.;Jones, S. K.
对一系列In0.52Al0.48As p(+)-i-n（+）和n(+)-i-p（+）二极管的雪崩倍增进行了系统研究，其标称本征区厚度范围为0.1至2.5 μ m，可以推断出有效电离系数在220至980 kV (.) cm（-1）之间。随着电场的增大，电子与空穴的电离系数比在32.6 ~ 1.2之间变化。在0.1 μ m厚的结构中，在雪崩击穿之前，隧道掘进开始主导大电流，对工作场施加了上限。虽然局部模型可以准确地预测二极管的击穿，但在低场下乘法估计过高。随着本征区厚度的减小，电离死空间的影响变得更加显著，可以用一种简单的校正技术来校正。
A systematic study of avalanche multiplication on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mu m has been used to deduce effective ionization coefficients between 220 and 980 kV (.) cm(-1). The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mu m-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique.