GRAPHITIZATION BEHAVIOR OF CARBON-FILM PREPARED FROM HIGH-MODULUS POLYIMIDE FILM - SYNTHESIS OF HIGH-QUALITY GRAPHITE FILM
GRAPHITIZATION BEHAVIOR OF CARBON-FILM PREPARED FROM HIGH-MODULUS POLYIMIDE FILM - SYNTHESIS OF HIGH-QUALITY GRAPHITE FILM
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DOI：
10.1016/0008-6223(94)90085-x
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发表时间：
1994-01-01
期刊：
影响因子：
10.9
通讯作者：
INAGAKI, M
中科院分区：
文献类型：
--
作者：
HISHIYAMA, Y;NAKAMURA, M;INAGAKI, M
在热处理过程中，不需要加压就可以成功制备出与高取向热解石墨质量相当的石墨薄膜。采用聚酰亚胺凝胶法制备45 mm厚的高模量聚酰亚胺薄膜，热处理温度在1800 ~ 3200℃之间，通过测量层间距d002、嵌合扩展、室温与液氮温度下的电阻率比和液氮温度下的磁阻，研究了碳膜的石墨化行为。在所有检测的样品中，碳层定向良好。石墨化是由2200摄氏度左右的热处理引起的。在2900 ~ 3200℃之间热处理的试样，其电阻率呈金属样温度依赖性。这些试样在室温与液氦温度下的电阻率之比均大于1.68。对3200℃c处理后的试样，层间间距为0.3354 nm，嵌合分布、液氮温度下1 T磁场下最大横向磁阻、室温与液氦温度下电阻率比分别为5.0°、1205.6%和3.46。
Graphite films comparable with highly oriented pyrolytic graphites in quality have successfully been prepared without any pressurization during the heat treatment. Graphitization behavior in carbon films prepared from a 45-mum-thick, high-modulus polyimide film, prepared via polyamic acid gel, with heat treatment temperatures between 1800 and 3200-degrees-C, was investigated by measuring interlayer spacing d002, mosaic spread, ratio of the resistivity at room temperature to that at liquid nitrogen temperature, and magnetoresistance at liquid nitrogen temperature. Carbon layers are oriented well in all the specimens examined. Graphitization was initiated by the heat treatment around 2200-degrees-C. Metallic-like temperature dependence of the resistivity was observed for the specimens heat-treated between 2900 and 3200-degrees-C. For these specimens, ratio of the resistivity at room temperature to that at liquid helium temperature was found to be higher than 1.68. For the 3200-degrees-C-treated specimen, the interlayer spacing, mosaic spread, maximum transverse magnetoresistance in a field of 1 T at liquid nitrogen temperature, resistivity ratio at room temperature to that at liquid helium temperature are 0.3354 nm, 5.0-degrees, 1205.6%, and 3.46, respectively.