High rate deposition of ZnO thin films by a small-scale inductively coupled argon plasma generated in open air
High rate deposition of ZnO thin films by a small-scale inductively coupled argon plasma generated in open air
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DOI：
10.1088/0022-3727/43/15/155203
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发表时间：
2010-03
期刊：
影响因子：
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通讯作者：
S. Stauss;Y. Imanishi;H. Miyazoe;K. Terashima
中科院分区：
文献类型：
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作者：
S. Stauss;Y. Imanishi;H. Miyazoe;K. Terashima
在大气压力下，在露天环境中，利用毫米级的电感耦合氩等离子体沉积了线性透明ZnO薄膜。提高衬底温度可以获得200至1 µm s−1的高生长速率。所得薄膜在可见光区的透光率大于80%，薄膜的粗糙度为15 nm。等离子体气体温度估计从N2的旋转温度通过光学发射光谱评估建议值高达约1800 K。在等离子体中检测到的物种是氩和锌自由基，但没有离子。薄膜的高生长速率归因于金属源灯丝的快速熔化和溅射，所产生的物种被等离子体气体携带到衬底表面。高的衬底温度以及高的扫描速率被认为是至关重要的透明，致密的ZnO薄膜的形成，第一促进表面迁移和第二允许调节的氧通量的表面。
Linear transparent ZnO films were deposited using a millimetre sized inductively coupled argon plasma at atmospheric pressure in open air. Increasing the substrate temperature enabled high growth rates between 200 and 1 µm s−1 to be obtained. The optical transmission of the obtained films is above 80% in the visible and the roughness of the films had a value of 15 nm. Plasma gas temperatures estimated from the rotational temperature of N2 assessed by optical emission spectroscopy suggest values of up to approximately 1800 K. The detected species in the plasma were argon and zinc radicals, but no ions. The high growth rate of the films is attributed to the rapid melting and sputtering of the metallic source filament, the produced species being carried to the substrate surface by the plasma gas. High substrate temperatures as well as high scanning rates are considered crucial to the formation of transparent, dense ZnO films, the first promoting surface migration and the second permitting regulation of the flux of oxygen to the surface.