Computational Analysis of Thin Film Ingaas/gaas Quantum Well Solar Cells with Back Side Light Trapping Structures References and Links
Computational Analysis of Thin Film Ingaas/gaas Quantum Well Solar Cells with Back Side Light Trapping Structures References and Links
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具有背面陷光结构的薄膜 Ingaas/gaas 量子阱太阳能电池的计算分析参考文献和链接
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J. Singh
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C. McPheeters;E. T. Yu;H. W. J. Shockley;Queisser;K. M. W. J. Mazzer;I. M. Barnham;A. Ballard;A. Bessiere;D. C. Ioannides;M. C. Johnson;T. N. D. Lynch;J. Tibbits,;G. Roberts;C. Hill;Calder;J G J Adams;B. Browne;I. Ballard;J. P. Connolly;N. L. A. Chan;A. Ioannides;W. Elder;P. Stavrinou;K. Barnham;N. Ekins‐Daukes;R M Farrell;C. Neufeld;S. C. Cruz;J. R. Lang;M. Iza;S. Keller;S. Nakamura;S. Denbaars;U. Mishra;J. Speck;A Freundlich;A. Fotkatzikis;L. Bhusal;L. Williams;A. Alemu;W. Zhu;J. Coaquira;A. Feltrin;G. Radhakrishnan;R B Laghumavarapu;M. El;N. Nuntawong;A. Moscho;L. F. Lester;D. Huffaker;S M Hubbard;C. Cress;C. G. Bailey;R. Raffaelle;S. G. Bailey;D. Wilt;C G Bailey;D. V. Forbes;S. Hubbard;V Popescu;G. Bester;M. C. Hanna;A. Norman;A. Zunger;M Law;L. E. Greene;J. C. Johnson;R. Saykally;P. Yang;L Tsakalakos;J. Balch;J. Fronheiser;B. Korevaar;O. Sulima;J. Rand;J Kupec;R. Stoop;B. Witzigmann;Wei;K. Shiu;N. Giebink;S. R. Forrest;S P Bremner;R. Corkish;C. Honsberg;P Spinelli;V. Ferry;J. van de Groep;M. van Lare;M. Verschuuren;R. Schropp;H. Atwater;A. Polman;I Serdiukova;C. Monier;M. Vilela;A. Freundlich;A Alemu;J J Schermer;P. Mulder;G. Bauhuis;M. Voncken;J. van Deelen;E. Haverkamp;P. K. Larsen;D Shahrjerdi;S. Bedell;C. Ebert;C. Bayram;B. Hekmatshoar;K. Fogel;P. Lauro;M. Gaynes;T. Gokmen;J. A. Ott;D. Sadana;C O Mcpheeters;D. Hu;D. Schaadt;E. T. Yu;C. Hill;S. Lim;D. Derkacs;D. Ting;C J Hwang;H C Casey;B. I. Miller;E. Pinkas;G J Bauhuis;J. Schermer;E. Haverkamp;J. Huijben;J. Soller;D. G. Hall;D Derkacs;W. V. Chen;P. Matheu;P. Yu;J Zou;D. Cockayne;B. Usher;Chen;P. Bhattacharya;J. Singh
使用严格的耦合波分析，对具有用于光捕获的各种背面反射和平面对称散射结构的薄膜（~2.5 μm厚）InGaAs/GaAs量子阱太阳能电池进行了模拟。二维周期性的金属/电介质散射结构进行了数值优化的Airmass 0光电流产生的每个设备结构。模拟结果表明，反射和散射结构器件的吸收光谱在很大程度上取决于薄膜器件结构的Fabry-Perot共振特性。通过与薄膜器件结构的模式耦合的组合以及通过与平面金属反射器相比减少寄生金属吸收，散射结构在长于GaAs吸收边缘的波长处显著增加量子威尔斯中的吸收。对于空气质量0照明和100%的载流子收集，在0.3 Ga 0.7 As/GaAs量子威尔斯的设备的估计短路电流密度提高了高达4.6 mA/cm 2（15%）相对于GaAs同质结设备，与改善导致近似相等的光散射成薄膜模式和减少金属吸收相比，平面反射层。p-n结太阳能电池效率的详细平衡极限，“J.单结和串联量子阱太阳能电池的最新结果，“Prog.光谱响应延伸至520 nm的高量子效率InGaN/GaN多量子阱太阳能电池，“Appl.“III-V稀氮化物基多量子阱太阳能电池，“具有GaP应变补偿层的InAs/GaAs量子点太阳能电池的器件性能，“Appl. Phys. Effect of strain compensation on quantum dot enhanced GaAs太阳能电池，“Appl. Near 1V open circuit voltage InAs/GaAs quantum dot solar cells“，Appl. Theoretical and experimental examination of the intermediate-band concept for strain-balanced（In，Ga）As/Ga（As，P）quantum dot solar cells，“Phys. Rev. Light absorption and emission in nanowire array solar cells，“Opt. Thermodynamic limits of quantum photovoltaic cell efficiency，“Appl. Detailed balance efficiency limits with quasi-Fermi level variations，“IEEE Trans. Plasmonic light trapping in thin-film Si solar cells，“J. Critical built-in electric field for an optimal carrier collection in multiquantum well p-in diodes“，Appl. Dependence of device performance on carrier escape sequence in multiquantum well p-in solar cells，“J.“大面积薄膜III/V器件的外延剥离，“物理。通过受控剥离技术实现的高效薄膜InGaP/InGaAs/Ge叠层太阳能电池，“应用半导体异质结构和光捕获优化...
Simulations of thin film (~2.5 µm thick) InGaAs/GaAs quantum well solar cells with various back side reflective and planar, symmetric scattering structures used for light trapping have been performed using rigorous coupled-wave analysis. Two-dimensional periodic metal/dielectric scattering structures were numerically optimized for Airmass 0 photocurrent generation for each device structure. The simulation results indicate that the absorption spectra of devices with both reflective and scattering structures are largely determined by the Fabry-Perot resonance characteristics of the thin film device structure. The scattering structures substantially increase absorption in the quantum wells at wavelengths longer than the GaAs absorption edge through a combination of coupling to modes of the thin film device structures and by reducing parasitic metal absorption compared to planar metal reflectors. For Airmass 0 illumination and 100% carrier collection, the estimated short-circuit current density of devices with In 0.3 Ga 0.7 As/GaAs quantum wells improves by up to 4.6 mA/cm 2 (15%) relative to a GaAs homojunction device, with the improvement resulting approximately equally from scattering of light into thin film modes and reduction of metal absorption compared to a planar reflective layer. Detailed balance limit of efficiency of p-n junctions solar cells, " J. Recent results for single-junction and tandem quantum well solar cells, " Prog. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm, " Appl. " III–V dilute nitride-based multi-quantum well solar cell, " J. device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers, " Appl. Phys. Effect of strain compensation on quantum dot enhanced GaAs solar cells, " Appl. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells, " Appl. Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells, " Phys. Rev. Light absorption and emission in nanowire array solar cells, " Opt. Thermodynamic limits of quantum photovoltaic cell efficiency, " Appl. Detailed balance efficiency limits with quasi-Fermi level variations, " IEEE Trans. Plasmonic light trapping in thin-film Si solar cells, " J. Critical built-in electric field for an optimum carrier collection in multiquantum well p-in diodes, " Appl. Dependence of device performance on carrier escape sequence in multi-quantum-well p-in solar cells, " J. " Epitaxial lift-off for large area thin film III/V devices, " Phys. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology, " Appl. Semiconductor heterostructures and optimization of light-trapping …