Electroluminescence from double heterostructures of perovskite semiconductors and thiophene/phenylene co-oligomers
Electroluminescence from double heterostructures of perovskite semiconductors and thiophene/phenylene co-oligomers
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DOI：
10.7567/1347-4065/ab54e5
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发表时间：
2019-12
影响因子：
1.5
通讯作者：
F. Sasaki;Naho Kurahashi;H. Yanagi
中科院分区：
文献类型：
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作者：
F. Sasaki;Naho Kurahashi;H. Yanagi
我们报道了钙钛矿半导体和噻吩/苯撑共聚低聚物（TPCO）双异质结构的LED特性。通过使用简单的溶液工艺，即“铸盖法”，在具有TPC 0的衬底上形成PerxO 3半导体。电致发光迅速猝灭，但它几乎恢复到其初始状态。在3V以内的脉冲工作下，器件具有较长的寿命。我们比较了LED特性与TPCO LED的特性。在钙钛矿/TPCO LED中强烈建议离子迁移和/或发光电化学电池操作。
We report LED properties in perovskite semiconductor and thiophene/phenylene co-oligomer (TPCO) double heterostructures. Perovskite semiconductors were formed by using a simple solution process, the “cast-capping method”, on substrates with TPCOs. The electroluminescence was quenched rapidly, but it recovered to nearly its initial states. Under pulsed operation within 3 V, the device had rather long durability. We compared the LED properties with those of TPCO LEDs. Ion migrations and/or light-emitting electrochemical cell operations were strongly suggested in the perovskite/TPCO LEDs.