Electron Beam Induced Deposition of Pt for Field Emitter Arrays
Electron Beam Induced Deposition of Pt for Field Emitter Arrays
复制标题
用于场发射器阵列的电子束诱导 Pt 沉积
DOI：
10.1143/jjap.35.6623
复制
发表时间：
1996
影响因子：
1.5
通讯作者：
H. Ryssel
中科院分区：
文献类型：
--
作者：
H. Morimoto;T. Kishimoto;M. Takai;S. Yura;A. Hosono;S. Okuda;S. Lipp;L. Frey;H. Ryssel
采用电子束诱导反应，在常规干蚀刻工艺制备的过蚀刻硅发射体上沉积铂发射体。在提取电压为100 V的条件下，从100尖端场射极阵列（FEA）获得了10µA的发射电流。采用聚焦离子束（FIB）刻蚀和电子束诱导沉积（EBID）技术制备了纳米场发射极原型。
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID).