Semiconductor behavior of a metal-organic framework (MOF)
Semiconductor behavior of a metal-organic framework (MOF)
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DOI：
10.1002/chem.200601003
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发表时间：
2007-01-01
影响因子：
4.3
通讯作者：
Garcia, Hermenegildo
中科院分区：
文献类型：
--
作者：
Alvaro, Mercedes;Carbonell, Esther;Garcia, Hermenegildo
在光激励下，MOF-5表现为半导体，并经历电荷分离(电子和空穴)，在微秒级的时间尺度内衰减。实际的导带能量值为0.2V，而NHE的带隙为3.4 eV。紫精的光诱导电子转移过程产生相应的紫精自由基阳离子，而MOF-5的空穴氧化N，N，N‘，N’-四甲基对苯二胺。MOF-5作为半导体研究的一个应用领域是择形光催化降解水溶液中的苯酚。
Upon light excitation MOF-5 behaves as a semiconductor and undergoes charge separation (electrons and holes) decaying in the microsecond time scale. The actual conduction band energy value was estimated to be 0.2 V versus NHE with a band gap of 3.4 eV. Photoinduced electron transfer processes to viologen generates the corresponding viologen radical cation, while holes of MOF-5 oxidizes N,N,N',N'-tetramethyl-p-phenylenediamine. One application investigated for MOF-5 as a semiconductor has been the shape-selective photocatalyzed degradation of phenol in aqueous solutions.