Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography
Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography
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SiO2 上封装硅薄膜的区熔再结晶——形貌和晶体学
DOI：
10.1063/1.93021
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发表时间：
1982
影响因子：
4
通讯作者：
D. Antoniadis
中科院分区：
文献类型：
--
作者：
M. Geis;Henry I. Smith;B. Tsaur;John C. C. Fan;E. Maby;D. Antoniadis
用条带式加热炉在SiO_2上的Si薄膜上移动一个窄的熔融区，获得了具有(10 0)织构、择优的面内取向、晶粒尺寸为1×10 mm的大面积再结晶Si薄膜。SiO_2和Si_3N_4的复合包覆层使硅表面光滑，形成(100)织构。晶粒的<100>轴倾向于沿熔融区的运动方向。各向异性地蚀刻到硅中的刻面凹坑的栅格允许确定局部取向。如前所述，再结晶薄膜已被用于制造金属氧化物半导体场效应晶体管，其电子表面迁移率可与单晶硅上制造的器件相媲美。
Large‐area films of recrystallized Si with (100) texture, preferred in‐plane orientation, and grain sizes ≳1× 10 mm have been produced by using a strip‐heater oven to move a narrow molten zone across Si films on SiO2. A composite encapsulation layer of SiO2 and Si3N4 over the Si leads to smooth surfaces and (100) texture. The 〈100〉 axes of grains tend to lie along the direction of motion of the molten zone. A grid of faceted pits etched anisotropically into the Si permits determination of local orientation. As described elsewhere, the recrystallized films have been used for the fabrication of metal‐oxide semiconductor field‐effect transistors which exhibit electron surface mobilities comparable to devices fabricated on single‐crystal Si.