Creation of Bifunctional Materials: Improve Electron-Transporting Ability of Light Emitters Based on AIE-Active 2,3,4,5-Tetraphenylsiloles
Creation of Bifunctional Materials: Improve Electron-Transporting Ability of Light Emitters Based on AIE-Active 2,3,4,5-Tetraphenylsiloles
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双功能材料的创建：基于 AIE 活性 2,3,4,5-四苯基硅咯提高发光体的电子传输能力
DOI：
10.1002/adfm.201303867
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发表时间：
2014-06-01
影响因子：
19
通讯作者：
Tang, Ben Zhong
中科院分区：
文献类型：
--
作者：
Chen, Long;Jiang, Yibin;Tang, Ben Zhong
2,3,4,5-四苯基硅杂环化合物是一种优异的固态发光体，具有聚集诱导发射（AIE）特性，但能够在有机发光二极管（OLED）中有效地同时充当发光层和电子传输层的材料却非常罕见。为了解决这个问题，本文设计并合成了三种由2,3,4,5-四苯基硅咯和二三苯基硼基官能团组成的定制n型发光体。新的噻咯通过标准光谱和晶体学方法进行了充分表征，并取得了令人满意的结果。研究了它们的热稳定性、电子结构、光物理性质、电化学行为以及在 OLED 中的应用。这些新型硅杂环化合物在固体薄膜中表现出 AIE 特性和高发射效率，并且具有比其母体 2,3,4,5-四苯基硅杂环化合物更低的 LUMO 能级。采用新型硅杂环化合物作为光发射体和电子传输体制备的双层OLED[ITO/NPB (60 nm)/硅杂环戊烷(60 nm)/LiF (1 nm)/Al (100 nm)]具有优异的性能，电致发光效率高达13.9 cd A(-1)、4.35%和11.6 lm W-1，相对于传统的电致发光效率有很大提高。具有附加电子传输层的三层器件。这些结果表明可以有效获得具有实用性的n型固态发射材料。
2,3,4,5-Tetraphenylsiloles are excellent solid-state light emitters featured aggregation-induced emission (AIE) characteristics, but those that can efficiently function as both light-emitting and electron-transporting layers in one organic light-emitting diode (OLED) are much rare. To address this issue, herein, three tailored n-type light emitters comprised of 2,3,4,5-tetraphenylsilole and dimesitylboryl functional groups are designed and synthesized. The new siloles are fully characterized by standard spectroscopic and crystallographic methods with satisfactory results. Their thermal stabilities, electronic structures, photophysical properties, electrochemical behaviors and applications in OLEDs are investigated. These new siloles exhibit AIE characteristics with high emission efficiencies in solid films, and possess lower LUMO energy levels than their parents, 2,3,4,5-tetraphenylsiloles. The double-layer OLEDs [ITO/NPB (60 nm)/silole (60 nm)/LiF (1 nm)/Al (100 nm)] fabricated by adopting the new siloles as both light emitter and electron transporter afford excellent performances, with high electroluminescence efficiencies up to 13.9 cd A(-1), 4.35% and 11.6 lm W-1, which are increased greatly relative to those attained from the triple-layer devices with an additional electron-transporting layer. These results demonstrate effective access to n-type solid-state emissive materials with practical utility.