Antireflective subwavelength structures on crystalline Si fabricated using directly formed anodic porous alumina masks
Antireflective subwavelength structures on crystalline Si fabricated using directly formed anodic porous alumina masks
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DOI：
10.1063/1.2205173
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发表时间：
2006-05-15
影响因子：
4
通讯作者：
Yugami, H
中科院分区：
文献类型：
--
作者：
Sai, H;Fujii, H;Yugami, H
提出并演示了一种在硅衬底上直接形成的阳极多孔氧化铝掩膜制备亚波长结构（SWS）表面的简单方法。通过这种技术，在抛光的单晶硅和化学蚀刻的多晶硅片上制备了SWS表面。获得了周期为100 nm，高度为300-400 nm的光滑锥形SWS表面。在300 ~ 1000 nm范围内，两种晶圆的反射率均低于1%，与数值模拟结果一致。800℃热退火后，SWS表面的反射率提高到3%。(c) 2006年美国物理研究所。
A simple fabrication technique for subwavelength structured (SWS) surfaces by means of anodic porous alumina masks directly formed on Si substrates was proposed and demonstrated. By this technique, SWS surfaces were fabricated on polished single-crystalline Si and chemically etched as-cut multicrystalline Si wafers. Smoothly tapered SWS surfaces with a periodicity of 100 nm and a height of 300-400 nm were obtained. A low reflectivity below 1% was observed from 300 to 1000 nm for both of the wafers, in agreement with numerical simulation. After thermal annealing at 800 degrees C, the reflectivity of the SWS surface increased to 3%. (c) 2006 American Institute of Physics.