Investigation of charge-collection efficiency of Kyoto's X-ray astronomical SOI pixel sensors, XRPIX
Investigation of charge-collection efficiency of Kyoto's X-ray astronomical SOI pixel sensors, XRPIX
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京都X射线天文SOI像素传感器XRPIX的电荷收集效率研究
DOI:
10.1016/j.nima.2014.05.025
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发表时间:
2014
期刊:
影响因子:
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通讯作者:
Matsumura, Hideaki; Tsuru, Takeshi Go; Tanaka, Takaaki; Nakashima, Shinya; Ryu, Syukyo G.; Takeda, Ayaki; Arai, Yasuo; Miyoshi, Toshinobu
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文献类型:
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作者:
Matsumura, Hideaki; Tsuru, Takeshi Go; Tanaka, Takaaki; Nakashima, Shinya; Ryu, Syukyo G.; Takeda, Ayaki; Arai, Yasuo; Miyoshi, Toshinobu
We are developing a monolithic active pixel sensor referred to as XRPIX for X-ray astronomy on the basis of silicon-on-insulator CMOS technology. A crucial issue in our recent development is the impact of incomplete charge collection on the spectroscopic performance. In this paper, we report the spectral responses of several devices having different intra-pixel structures or produced from different wafers. We found that an emission line spectrum exhibits large low-energy tails when the size of the buried p-well, which acts as the charge-collection node, is small. Moreover, in charge sharing events, the peak channels of the emission lines shift toward channels lower than those without charge sharing. This peak shift is more pronounced as the distance between the pixel center and the position of incident photon increases. This suggests that the charge-collection efficiency is degraded at the pixel boundary. We also found that the charge-collection efficiency depends on the strength of the electric field at the interface of the depletion and insulator layers.