Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
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DOI：
10.1063/1.3028343
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发表时间：
2008-11
影响因子：
4
通讯作者：
Yi Zhou;M. Ogawa;Xinhai Han;Kang L. Wang
中科院分区：
文献类型：
--
作者：
Yi Zhou;M. Ogawa;Xinhai Han;Kang L. Wang
Due to the strong Fermi-level pinning close to the germanium (Ge) valence band edge, all metal/p-type Ge contacts show Ohmic characteristics, while metal/n-type Ge contacts exhibit rectifying behaviors. In this paper, we report a simple method to alleviate this Fermi-level pinning effect by inserting a thin layer of aluminum oxide (Al2O3), formed by oxidation of aluminum (Al), between the metal/Ge interface. The effective Schottky barrier heights of nickel (Ni)∕n-type Ge, cobalt (Co)∕n-type Ge, and iron (Fe)∕n-type Ge decrease from 0.54, 0.62, and 0.61eV to 0.39, 0.23, and 0.18eV, respectively, with this thin layer of Al2O3. The tunneling oxide significantly suppresses the Fermi-level pinning, and yet does not restrict the current density. This method seems promising to realize low resistance metal contact to n-type Ge, which is essential to realize n-channel Ge complementary metal-oxide-semiconductor field-effect transistor with metal source and drain.
