METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
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DOI：
10.1109/t-ed.1982.20813
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发表时间：
1982-01-01
影响因子：
3.1
通讯作者：
LINH, NT
中科院分区：
文献类型：
--
作者：
DELAGEBEAUDEUF, D;LINH, NT
本文对AlGaAs（n）-GaAs（n-或p-）异质结构成的二维电子气场效应晶体管（TEGFET）进行了理论计算。该理论考虑到：i）二维电子气（2-DEG）中的子带分裂;以及ii）已发现增强电子迁移率的未掺杂AlGaAs间隔层的存在。计算了TEGFET的面载流子浓度，建立了适用于大小栅FET电荷控制的简单解析公式。
Theoretical calculations have been developed for a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs (n)-GaAs (n-or p-) heterostructure in which the Schottky gate is deposited on the AlGaAs(n) top layer. The theory takes into account: i) the subband splitting in the two-dimensional electron gas (2-DEG); and ii) the existence of an undoped AlGaAs spacer layer which has been found to enhance the electron mobility. The sheet carrier concentration of the TEGFET has been calculated, and a simple analytical formula has been established for the charge control in large and small gate FET.