L10 phase transition in FePt thin films via direct interface reaction
L10 phase transition in FePt thin films via direct interface reaction
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DOI：
10.1088/0022-3727/41/23/235001
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发表时间：
2008-12
期刊：
影响因子：
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通讯作者：
Xiaohong Li;Bao-ting Liu;Hongyu Sun;Jianxin Guo;Fengqin Wang;Wei Li;Xiangyi Zhang
中科院分区：
文献类型：
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作者：
Xiaohong Li;Bao-ting Liu;Hongyu Sun;Jianxin Guo;Fengqin Wang;Wei Li;Xiangyi Zhang
降低FePt薄膜的L10有序化温度对其作为高密度磁记录介质的应用具有重要意义。在这项研究中，直接沉积在Si衬底上的FePt薄膜的L10有序化过程已被薄膜和Si衬底之间的界面反应显着加速，因此薄膜显示出较低的L10有序化温度T = 310 °C相比，那些沉积在Si/SiO2衬底上。加速的L10有序转变主要依赖于界面反应期间有序畴的快速生长。薄膜厚度对界面反应有重要影响，因此可以用来调节FePt薄膜的L10有序化过程。
Lowering the L10 ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L10 ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L10 ordering temperature of T = 310 °C as compared with those deposited on Si/SiO2 substrates. The accelerated L10 ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L10 ordering process of the FePt films.