AIN/GaN heterostructure prepared using a low-temperature helicon sputtering system
AIN/GaN heterostructure prepared using a low-temperature helicon sputtering system
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DOI：
10.1002/pssa.200723110
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发表时间：
2007-10-01
影响因子：
2
通讯作者：
Hsu, C.-H.
中科院分区：
文献类型：
--
作者：
Wu, J. D.;Chien, W. C.;Hsu, C.-H.
Single-crystal line AlN thin films were epitaxially deposited on GaN/sappbire at a low temperature of 300 degrees C using a helicon sputtering system. The crystallinity of the AlN films and the in-plane axes relation between the films and substrates were characterized by X-ray rocking curve and phi-scan measurements. The two-dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 x 10(13) cm(-2) was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN beterostructure for use in high-power, high-speed and high-temperature electronics. (C) 2007 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim
