Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs
Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs
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DOI：
10.1063/1.2709622
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发表时间：
2007-03
影响因子：
3.2
通讯作者：
J. Ng;W. M. Soong;M. Steer;M. Hopkinson;J. David;J. Chamings;S. Sweeney;A. Adams
中科院分区：
文献类型：
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作者：
J. Ng;W. M. Soong;M. Steer;M. Hopkinson;J. David;J. Chamings;S. Sweeney;A. Adams
报道了用固体源分子束外延方法生长的与−衬底晶格匹配的块状GaInNAs p-−i-∼n光电二极管，其光响应范围为1.3μm。在1014-1015 cm−3范围内获得了较低的本底掺杂浓度。其中一个样品具有0.5μm厚的GaInNAs吸收层，在2V的反向偏置下，对1.28μm的带边的响应度为0.11A/W。
We report bulk GaInNAs p−i−n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to ∼1.3 μm. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 1014–1015 cm−3 was obtained in the samples. One of the samples with a 0.5 μm thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 μm at reverse bias of 2 V.