Unusual photoresponse of indium doped ZnO/organic thin film heterojunction
Unusual photoresponse of indium doped ZnO/organic thin film heterojunction
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DOI：
10.1063/1.4704655
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发表时间：
2012-04
影响因子：
4
通讯作者：
S. Vempati;Saraswathi Chirakkara;J. Mitra;P. Dawson;K. Nanda;S. .. Krupanidhi
中科院分区：
文献类型：
--
作者：
S. Vempati;Saraswathi Chirakkara;J. Mitra;P. Dawson;K. Nanda;S. .. Krupanidhi
研究了n型掺铟氧化锌和p型聚合物(PEDOT：PSS)异质结器件的光响应，并与In-ZnO样品的光致发光进行了对比。除了在紫外光下具有预期的光响应外，异质结对可见光(532 Nm)也表现出显著的光响应。然而，无论是掺杂的氧化锌还是PEDOT：PSS都没有表现出对可见光的光响应。异质结的亚带隙光响应来自可见光子在In-ZnO价带和位于带隙内的局域态之间的e-h产生。虽然In-ZnO掺杂量的增加对光致发光的影响有限，但它显著降低了光致发光的响应。研究表明，最佳掺杂器件在检测可见光窗口中的波长方面具有良好的应用前景。
Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT:PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible.