AlGaN/GaN field effect Schottky barrier diode (FESBD)
AlGaN/GaN field effect Schottky barrier diode (FESBD)
复制标题
AlGaN/GaN 场效应肖特基势垒二极管 (FESBD)
DOI：
10.1002/pssc.200461300
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
K. Hataya
中科院分区：
文献类型：
--
作者：
S. Yoshida;Jiang Li;N. Ikeda;K. Hataya
我们提出了一种新型的场效应肖特基势垒二极管（FESBD）与AlGaN/GaN异质结的双肖特基结构相结合，以获得一个低的导通电压。对垂直和平面型FESBD进行了试验。采用金属有机物化学气相沉积（MOCVD）技术，通过选择性区域生长（SAG）技术，生长了垂直AlGaN/GaN异质结构。接触层也使用SAG技术生长。双肖特基结构的制造，以获得低的导通电压。即，Al/Ti用于低肖特基势垒金属，Pt用于高势垒金属。二极管的导通电压低于0.1V。通过较高肖特基势垒电极的夹断效应，反向击穿电压超过400 V，尽管用于低肖特基势垒金属的Al/Ti显示欧姆特性。（© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We demonstrate a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure to obtain a low on-voltage. The vertical and planar FESBDs were tried. A vertical AlGaN/GaN heterostructure was regrown by a selective area growth (SAG) technique using a metalorganic chemical vapor deposition (MOCVD). The contact layer was also grown using an SAG technique. Dual Schottky structures were fabricated to obtain a low on-voltage. That is, Al/Ti was used for a low Schottky barrier metal and Pt used for a higher barrier metal. The on-voltage of the diode was below 0.1 V. By the pinch-off effect of a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V although the Al/Ti used for a low Schottky barrier metal showed an ohmic property. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)