Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors
Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors
复制标题
表面处理对 AlGaN/GaN 高电子迁移率晶体管隔离电流的影响
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
S. Pearton
中科院分区：
文献类型：
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作者：
N. Moser;J. Gillespie;G. Via;A. Crespo;M. Yannuzzi;G. Jessen;R. Fitch;B. Luo;F. Ren;B. Gila;A. Onstine;C. Abernathy;S. Pearton
台面隔离AlGaN/GaN高电子迁移率晶体管中的器件间隔离电流被发现表现出热激活行为，激活能为1.5 eV。该值在很大程度上与表面清洁工艺或用于减少器件中电流崩塌现象的钝化膜类型（SiNX、Sc2 O3、MgO）无关。然而，隔离电流的大小是所采用的表面处理的强函数。最低的隔离电流的条件下，电流崩溃是减轻使用氧化钪钝化层。
Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an activation energy of ∼1.5 eV. This value is largely independent of surface cleaning processes or the type of passivation film (SiNX, Sc2O3, MgO) used to reduce the current collapse phenomena in the devices. However, the magnitude of the isolation current is a strong function of the surface treatment employed. The lowest isolation currents for conditions under which current collapse is mitigated are obtained using Sc2O3 passivation layers.