Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
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DOI：
10.1063/1.4791570
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发表时间：
2013-02-11
影响因子：
4
通讯作者：
Tani, Masahiko
中科院分区：
文献类型：
--
作者：
John Ibanes, Jasher;Herminia Balgos, Ma;Tani, Masahiko
利用太赫兹时域光谱技术研究了硅（100）衬底上GaAs-AlGaAs核壳纳米线（CSNW）的太赫兹（THz）发射。外加磁场的极性依赖性强烈表明，太赫兹辐射起源于光载流子的CSNW。光激发的GaAs-AlGaAs核壳产生了更宽的太赫兹发射带宽相比，只是GaAs芯材料。这一结果目前归因于AlGaAs壳层中更快的载流子寿命。太赫兹发射光谱数据的时间分辨光致发光研究的支持。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4791570]
Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791570]