Film Thickness Dependence of Dielectric Property and Crystal Structure of PbTiO3 Film Prepared on Pt/SiO2/Si Substrate by Metal Organic Chemical Vapor Deposition
Film Thickness Dependence of Dielectric Property and Crystal Structure of PbTiO3 Film Prepared on Pt/SiO2/Si Substrate by Metal Organic Chemical Vapor Deposition
复制标题
金属有机化学气相沉积法在 Pt/SiO2/Si 基片上制备 PbTiO3 薄膜的介电性能和晶体结构的膜厚依赖性
DOI：
10.1143/jjap.32.4175
复制
发表时间：
1993
影响因子：
1.5
通讯作者：
Nobuyasu Mizutani Nobuyasu Mizutani
中科院分区：
文献类型：
--
作者：
H. Funakubo;T. Hioki;M. Otsu;Kazuo Shinozaki Kazuo Shinozaki;Nobuyasu Mizutani Nobuyasu Mizutani
研究了采用金属有机化学气相沉积法在Pt/SiO2/Si衬底上制备的PbTiO 3薄膜的晶体结构沿着介电性能。相对介电常数随着薄膜厚度的增加而增加。与厚度大于0.3 μ m的晶体结构相比，在低于0.3 μ m的膜厚度下观察到晶体结构差异;即，c轴与a轴的晶格常数比、（00 L）与（H 00）反射的强度比以及平均微晶尺寸随着膜厚度的减小而减小，并且不均匀应力随着膜厚度的减小而增大。厚度低于0.3 μm的晶体缺陷可能与衬底附近存在低相对介电常数层有关。
The crystal structure of PbTiO3 film, which was prepared on a Pt/SiO2/Si substrate by metal organic chemical vapor deposition, was investigated along with its dielectric properties. The relative dielectric constant increased with increasing film thickness. Crystal structure difference was observed below 0.3 µm of film thickness, as compared to that above 0.3 µm of thickness; i.e., the lattice constant ratio of the c-axis to a-axis, the intensity ratio of (00l) to (h00) reflections and the average crystallite size decreased, and the nonuniform stress increased with decrease in the film thickness. These crystal imperfections for below 0.3 µm thickness might be related to the existence of a low relative dielectric constant layer near the substrate.