Novel approach to atomic force lithography
Novel approach to atomic force lithography
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原子力光刻的新方法
DOI：
10.1116/1.590117
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发表时间：
1998
影响因子：
1.4
通讯作者：
H. Kurz
中科院分区：
文献类型：
--
作者：
S. Hu;S. Altmeyer;A. Hamidi;B. Spangenberg;H. Kurz
一个两层的抗蚀剂系统组成的3 nm的钛和65 nm的聚甲基丙烯酸甲酯（PMMA）已开发的机械原子力显微镜纳米光刻的潜力。已在TiO 2 Ti膜中开槽了约20 nm宽的结构。通过在氧气中的反应离子蚀刻（RIE）工艺将实现的Ti图案转移到PMMA底层中。最后，通过在SF6+O2气体混合物中的第二RIE步骤，已经在硅中制造了30 nm宽和45 nm深的凹槽以及具有55 nm周期的孔阵列，其直径为20-30 nm，深度为45 nm。
A two-layer resist system consisting of 3 nm titanium and 65 nm polymethylmethacrylate (PMMA) has been developed to expand the potential of mechanical atomic force microscope nanolithography. Approximately 20 nm wide structures have been grooved in an ultrathin Ti film. The realized Ti patterns were transferred into the PMMA bottom layer by an reactive ion etching (RIE) process in oxygen. Finally, 30 nm wide and 45 nm deep grooves, and arrays of holes with a period of 55 nm, which are 20–30 nm in diameter and 45 nm in depth, have been fabricated in silicon by a second RIE step in a SF6+O2 gas mixture.