Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
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DOI：
10.1063/1.3184567
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发表时间：
2009-07-20
影响因子：
4
通讯作者：
Schubert, M.
中科院分区：
文献类型：
--
作者：
Hofmann, T.;Herzinger, C. M.;Schubert, M.
利用椭圆偏振法在太赫兹（0.2 ~ 1.5 THz）和中红外（9 ~ 50 THz）光谱区对p-p（+）硅同质结的空穴扩散谱进行了非侵入光学测量。在太赫兹区，在p-p（+）同质结的边界处观察到具有横向电极化的表面导波共振，并且发现该共振对低掺杂p型载流子浓度以及p-p（+）同质结内的空穴扩散谱极为敏感。有效的质量近似可以确定同结空穴浓度为p=2.9x10(15) cm(-3), p(+)=5.6x10(18) cm(-3)，扩散时间常数Dt=7.7x10(-3) mu m(2)，与先前的电学研究一致。
Noninvasive optical measurement of hole diffusion profiles in p-p(+) silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p-p(+) homojunction, and which is found to be extremely sensitive to the low-doped p-type carrier concentration as well as to the hole diffusion profile within the p-p(+) homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9x10(15) cm(-3), p(+)=5.6x10(18) cm(-3), and diffusion time constant Dt=7.7x10(-3) mu m(2), in agreement with previous electrical investigations.