Projection photolithography by wave-front conjugation
Projection photolithography by wave-front conjugation
复制标题
波前共轭投影光刻
DOI：
10.1364/josa.71.000737
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发表时间：
1981
影响因子：
--
通讯作者：
K. Chiang
中科院分区：
文献类型：
--
作者：
M. Levenson;K. Johnson;V. C. Hanchett;K. Chiang
利用简并四波混频产生共轭波前，将具有亚微米特征的图像投影到光阻涂层基板上。在413纳米照明下，所开发的模式显示出每毫米800行对的分辨率，与理论预期一致。图案不会因斑点或边缘增强而退化，放大倍率在统一的0.1%以内。聚焦是通过一种新的干涉测量程序完成的。
Conjugate wave-front generation by degenerate four-wave mixing has been employed to project images with submicrometer features onto photoresist-coated substrates. The developed patterns demonstrate a resolution of >800 line pairs per millimeter for 413-nm illumination, consistent with theoretical expectations. The patterns are not degraded by speckle or edge enhancement, and the magnification is within 0.1% of unity. Focusing is accomplished by a novel interferometric procedure.