Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics
Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics
复制标题
具有优异数据保持特性的1T2C型铁电存储单元的存储操作
DOI：
10.1109/16.944189
复制
发表时间：
2001
影响因子：
3.1
通讯作者：
H. Ishiwara
中科院分区：
文献类型：
--
作者：
Sung‐Min Yoon;H. Ishiwara
制备了一种新型的单晶体管双电容（1T2C）结构的fet型铁电存储电池，并对其进行了表征，该电池通过对两个相反方向的铁电电容器进行极化，抑制了铁电薄膜在数据保留过程中去极化场的产生。结果表明，所存储的数据是无损读出的，其保留时间比传统的铁电栅场效应管长得多。
A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET.