Prismatic stacking faults in epitaxially laterally overgrown GaN
Prismatic stacking faults in epitaxially laterally overgrown GaN
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DOI：
10.1063/1.2193352
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发表时间：
2006-04
影响因子：
4
通讯作者：
J. Mei;S. Srinivasan;R. Liu;F. Ponce;Y. Narukawa;T. Mukai
中科院分区：
文献类型：
--
作者：
J. Mei;S. Srinivasan;R. Liu;F. Ponce;Y. Narukawa;T. Mukai
We report on the presence of optically active stacking faults on basal and prismatic planes in epitaxially laterally overgrown GaN (ELOG) on {112¯2} facets. The structure of the faults has been analyzed using diffraction contrast electron microscopy. We show that stacking faults on {112¯0} prismatic planes involve a lattice displacement of 12⟨11¯01⟩, parallel to the fault plane. They appear as jogs connecting basal-plane stacking faults, the latter with a lattice displacement of 16⟨202¯3⟩. These faults are observed only in the laterally overgrown regions that grow on {112¯2} planes, which indicates that the stacking fault formation is closely related to the orientation of the growth surface. Possible formation mechanisms of these faults are discussed. Direct correlation between TEM and cathodoluminescence shows that these prismatic-plane and basal-plane stacking faults are optically active with light emission at 3.30 and 3.41eV, respectively.
