Electrically tuned g tensor in an InAs self-assembled quantum dot
Electrically tuned g tensor in an InAs self-assembled quantum dot
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DOI：
10.1103/physrevb.84.041302
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发表时间：
2011-07-06
影响因子：
3.7
通讯作者：
Tarucha, S.
中科院分区：
文献类型：
--
作者：
Deacon, R. S.;Kanai, Y.;Tarucha, S.
我们研究了用纳米间隙电极技术接触并使用背栅和侧栅电极进行电门控的单个无帽InAs量子点中朗德g张量的全电调谐。磁输运测量允许从施加在样品平面上的磁场的塞曼能量的测量中提取g张量分量。侧栅电极允许调整平面内g张量分量的各向异性，并且适合使用g因子调制共振方案来操纵量子点自旋态。
We investigate the all-electrical tuning of the Lande g tensor in a single uncapped InAs quantum dot contacted with a nanogap electrode technique and electrically gated with both back-and side-gate electrodes. Magnetotransport measurements allow extraction of the g tensor components from measurements of the Zeeman energy for magnetic fields applied in the plane of the sample. The side-gate electrode allows tuning of the anisotropy of the in-plane g tensor components and is suitable for the manipulation of the quantum-dot spin states using g factor modulation resonance schemes.