Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure
Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure
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DOI：
10.1063/1.1848185
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发表时间：
2005-01
影响因子：
4
通讯作者：
Y. Ishikawa;H. Ikeda;M. Tabe
中科院分区：
文献类型：
--
作者：
Y. Ishikawa;H. Ikeda;M. Tabe
研究了Si势垒粗糙度对Si/SiO_2双势垒结构垂直隧穿输运的影响。结果表明，随着硅势垒粗糙度的增加，隧穿模式由共振隧穿(平坦极限)向单电子隧穿(粗糙极限)转变。结果表明：(1)由于量子化能级的空间涨落，硅势垒中形成了库仑岛；(2)由于散射事件的增加，导致了顺序隧穿而不是共振隧穿。
The effect of Si potential well roughness on the vertical tunneling transport through the Si∕SiO2 double-barrier structure is studied. The increase of Si well roughness is shown to cause a transition of tunneling mode from resonant tunneling (flat limit) to single-electron tunneling (rough limit). The result suggests that the Si well roughness induces (1) formation of the Coulomb islands in the Si well due to the spatial fluctuation of quantized levels and (2) sequential tunneling instead of resonant tunneling due to the increase of scattering events.